Wide bandgap semiconductors are extremely attractive for the gamut of power electronics applications from power conditioning to microwave transmitters for communications and radar Algan / ganhemt的高頻大功率應用在很大程度上受制于電流崩塌效應。
As a wide bandgap semiconductor material , silicon carbide is an exellent material with superior thermal , electrical , mechanical and chemical properties for the fabrication of high temperature , high power , high frequency and radiation hardening electronic devices Sic是一種寬帶隙半導體材料、第三代半導體材料的代表,是制造高溫、高頻、大功率、抗輻照等半導體器件的優(yōu)選材料,又被稱為極端電子學材料,在微電子學領域具有廣闊的應用前景。
Zno is a ii - vi wide bandgap semiconductor which is used for various applications such as gas sensors , bulk - acoustic - wave devices , surface - acoustic - wave devices , varistors , light emitting , light detecting devices and so on . undoped and al doped zno thin films have also been widely used in transparent conducting layers because of their higher thermal stability and good resistance against hydrogen plasma processing damage compared with ito ( sn - doped in2o3 ) films Zno是一種新型的直接帶隙寬禁帶半導體材料,具有六方纖鋅礦結構,較高的激子束縛能( 60mev ) ,較低的電子誘生缺陷和閾值電壓低等優(yōu)點,在uv探測器、藍紫光led和ld等光電子器件領域有巨大的應用潛景。